| PART |
Description |
Maker |
| MA4E2502M MA4E2502 MA4E2502H MA4E2502L |
SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes
|
MACOM[Tyco Electronics]
|
| MA4E2508M MA4E2508 MA4E2508H MA4E2508L |
SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
|
MACOM[Tyco Electronics]
|
| MADS-002545-1307 MADS-002545-1307MG |
SURMOUNTTM Schottky Diodes
SURMOUNTTM Schottky Diodes: Cross-Over Quad Series Ultra-Small 600x600um Surface-Mount Chip
|
M/A-COM Technology Solu...
|
| 2SD1664 2SD1858 A5800362 2SD1664P 2SD1664T100Q 2SD |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
Medium Power Transistor (32V/ 1A)
Medium Power Transistor (32V, 1A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Littelfuse
Rohm CO.,LTD.
ROHM[Rohm]
|
| MA4SPS42XV7 MA4SPS420-15 |
SURMOUNTTM PIN Diodes
SURMOUNT PIN Diodes
SURMOUNTTM PIN Diodes
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc.
Agilent (Hewlett-Packard)
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| BAT14-03 BAT14-03W Q62702-A1103 BAT1403W |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SD882 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
|
UTC
|
| 2SD882SL-X-T92-R |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
|
Unisonic Technologies
|
| 2SD882S09 2SD882SG-X-AA3-R 2SD882SG-X-T92-K 2SD882 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
|
Unisonic Technologies
|
